Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation

By C. Riedl, C. Coletti, U. Starke. 2010

476 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d9b57b1b793b738233df948388bc0ac3793953e2

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In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC (2016, background): “The reason for the relatively slow step velocity of the retracting crystal planes is the high density of buffer layer nuclei which stabilize the surface by surface free energy minimization due to covalent bonds to the substrate (Riedl et al. 2010).”
Epitaxial Graphene on SiC: A Review of Growth and Characterization (2016, background): “Transport measurements of the graphen layer indicated igher motilities (2000 cm2/Vs) in co parison to UHV-grown epitaxi l graphene (700 cm2/Vs) [81].”
Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene (2011, background): “A low density of states in the vicinity of the Fermi level is a consequence of the strongly-modified electronic structure of the buffer layer due to partial hybridization of its carbon atoms with the SiC substrate [10,11].”
Production and processing of graphene and related materials (2020, background): “6 eV, indicating that the surface is C-rich [659].”
Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction (2015, background): “ on a substrate. The PMMA is finally dissolved with acetone. Graphene layers can be epitaxially formed by heating silicon carbide (SiC) in ultra-high vacuum to temperature between 1000 °C and 1500 °C [107][108]. Hexagonal 4H-SiC ( E g 3.26eV ) and 6H-SiC ( E g 3.03eV ) polytypes are commonly employe”