Inkjet-printed graphene electronics.
By F. Torrisi, Tawfique Hasan, Weiping Wu, Zhipei Sun, Antonio Lombardo, T. Kulmala, Gen-Wen Hsieh, Sungjune Jung, Francesco Bonaccorso, Philip Paul and 2 more. ACS Nano, 2011
1,148 citations recorded by the source corpus.
We demonstrate inkjet printing as a viable method for large-area fabrication of graphene devices. We produce a graphene-based ink by liquid phase exfoliation of graphite in N-methylpyrrolidone. We use it to print thin-film transistors, with mobilities up to ∼95 cm(2) V(-1) s(-1), as well as transparent and conductive patterns, with ∼80% transmittance and ∼30 kΩ/□ sheet resistance. This paves the way to all-printed, flexible, and transparent graphene devices on arbitrary substrates.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/d936f0b775da8a417d4f015f5a833b7fb8094d7f
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In Electrical and Electronic Engineering
- Andrea C. Ferrari
- Tawfique Hasan
- F. Torrisi
- K. Novoselov
- Edmund J. R. Kelleher
- R. I. Woodward
- Frank Schwierz
- Francesco Bonaccorso
In Materials Chemistry
- Andrea C. Ferrari
- K. Novoselov
- Tawfique Hasan
- Francesco Bonaccorso
- F. Torrisi
- Edmund J. R. Kelleher
- A. Castellanos-Gómez
- John Robertson
Citations in the corpus
- Solution processed MoS2-PVA composite for sub-bandgap mode-locking of a wideband tunable ultrafast Er:fiber laser (2015, background): “Despite photon energies lower than the material bandgap, these studies have proposed that the near-infrared saturable absorption can arise from interband states induced by defects [24, 28] such as observed from edges of liquid phase exfoliated chemically pristine flakes of other 2d materials like gr”