Ultralong dephasing time in InGaAs quantum dots.

By P. Borri, Wolfgang W. Langbein, S. Schneider, U. Woggon, R. Sellin, D. Ouyang, D. Bimberg. Physical Review Letters, 2001

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On‐chip single photon sources using planar photonic crystals and single quantum dots (2010, background): “Early optical experiments on semiconductor QDs demonstrated the well known two-level behaviour of Rabi flopping [21–23], where an excitation is driven from the ground state to the excited state and back again.”
Coherent properties of a two-level system based on a quantum-dot photodiode (2002, background): “Low-temperature dephasing times for excitons in self-assembled QDs have been shown to exceed several hundred picoseconds, allowing sufficiently high numbers of coherent manipulations with picosecond pulse”
A quantum logic gate between a solid-state quantum bit and a photon (2013, methodology): “field by taking the steady-state solution to the above equations. This solution is given by 2 Ö Ö /2 a x ca i i i g aa (15) Taking the expectation of both sides of Eq. (3) and inserting Eq. (15) we attain the relation Ö Ö baxx r where 2 1 /2 a ca i r i i g (16) Fo”
Unconventional motional narrowing in the optical spectrum of a semiconductor quantum dot (2006, background): “Zero-phonon line and phonon side bands The side bands are related to the radiative recombination assisted by the emission and the absorption of acoustic phonon”
Variable optical buffer using slow light in semiconductor nanostructures (2003, background): “Experimentally, a single QD has been shown to have eV dephasing at low temperatures [31].”