Highly efficient spin transport in epitaxial graphene on SiC

By B. Dlubak, Marie‐Blandine Martin, C. Deranlot, B. Servet, S. Xavier, R. Mattana, M. Sprinkle, C. Berger, W. D. de Heer, F. Petroff and 3 more. Nature Physics, 2012

405 citations recorded by the source corpus.

Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100 μm. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen. A demonstration of the ability to transmit spin currents over distances of more than one hundred micrometres with an efficiency of up to 75% in graphene grown epitaxially on silicon carbide improves the prospects of graphene-based spintronic devices.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d86894fca000c2d6a89e4e29b8ea526e08d08b49

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In Atomic and Molecular Physics, and Optics

  1. V. Joshi
  2. Weisheng Zhao
  3. Jacques-Olivier Klein
  4. Dafine Ravelosona
  5. Yue Zhang
  6. Zhaohao Wang
  7. Wang Kang
  8. Claude Chappert

In Electrical and Electronic Engineering

  1. Weisheng Zhao
  2. Jacques-Olivier Klein
  3. Dafine Ravelosona
  4. Yue Zhang
  5. Claude Chappert

In Materials Chemistry

  1. V. Joshi

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