Synthesis, Transfer, and Devices of Single- and Few-Layer Graphene by Chemical Vapor Deposition

By Lewis Gómez De Arco, Yi Zhang, Akshay Kumar, Chongwu Zhou. IEEE transactions on nanotechnology, 2009

270 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d862e453af67b476e4df3561e4d60c657c80ce55

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. V. Singh
2. L. Zhai
3. Mildred S. Dresselhaus
4. Soumen Das
5. S. Seal
6. S. Khondaker
7. Daeha Joung

In Materials Chemistry

1. Jing Kong
2. Mildred S. Dresselhaus
3. A. Reina
4. Daeha Joung
5. V. Singh
6. L. Zhai
7. Soumen Das
8. S. Seal

Citations in the corpus

• Growth of large-area single- and Bi-layer graphene by controlled carbon precipitation on polycrystalline Ni surfaces (2009, methodology): “concept has recently been used to produce 1–2 LG under either vacuum conditions [11, 20] or in an ambient pressure CVD process [14-17].”
• Graphene based materials: Past, present and future (2011, background): “It is worth to notice that nickel is the most commonly used metal substrate and studied well for large area, high quality mono and few layer of the graphene [41,43,48,186,187].”
• Epitaxial growth of large-area single-layer graphene over Cu(111)/sapphire by atmospheric pressure CVD (2012, background): “Most of the CVD growth uses polycrystalline Ni [15-20], Fe [21], and Cu [22-26] films/foils,”