Boron nitride substrates for high mobility chemical vapor deposited graphene

By W. Gannett, W. Regan, Kenji Watanabe, Takashi Taniguchi, M. Crommie, A. Zettl. 2011

379 citations recorded by the source corpus.

Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to graphene device fabrication, but to date such graphene has exhibited lower mobility than that produced by exfoliation. Using a boron nitride underlayer, we achieve mobilities as high as 37 000 cm2/V s, an order of magnitude higher than commonly reported for CVD graphene and better than most exfoliated graphene. This result demonstrates that the barrier to scalable, high mobility CVD graphene is not the growth technique but rather the choice of a substrate that minimizes carrier scattering.

Subfields: Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d765378a18986dede88306638cd0d202c1dd9bd2

How researchers see this paper

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In Biomedical Engineering

1. Hui‐Ming Cheng
2. Q. Fu
3. W. Ren
4. Zhiyong Zhang
5. Lianmao Peng
6. A. Di Bartolomeo

In Materials Chemistry

1. Hui‐Ming Cheng
2. W. Ren
3. X. Bao
4. Q. Fu
5. Libo Gao
6. Zhiyong Zhang
7. Lianmao Peng
8. Feng Li

Citations in the corpus

• Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum (2012, methodology): “We believe that the carrier mobility of the single-crystal graphene grown on Pt can be further improved by using boron nitride substrate”