High‐Density Carrier Accumulation in ZnO Field‐Effect Transistors Gated by Electric Double Layers of Ionic Liquids

By Hongtao Yuan, H. Shimotani, A. Tsukazaki, A. Ohtomo, M. Kawasaki, Y. Iwasa. 2009

521 citations recorded by the source corpus.

Subfields: Catalysis, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d71f74d99327134faa7a81c4c0046dcafb3a9651

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In Catalysis

1. N. Nagaosa

In Electrical and Electronic Engineering

1. N. Nagaosa
2. Jinlong Yang

In Materials Chemistry

1. Xingxing Li
2. N. Nagaosa
3. Jinlong Yang

Citations in the corpus

• Electric double-layer transistors: a review of recent progress (2015, unknown): “Yuan et al. have pointed out that the switching of IL gating is much faster than that of electrolyte-gated EDLTs using liquid or solid KClO4/PEO [99] (as shown in Fig.”
• First principles design of spintronics materials (2016, background): “5)AsO alloy, but it seems much easier to achieve in 2DMnPSe3 since carrier doping in 2D systems can reach a very high level [137,138].”
• Emergent phenomena at oxide interfaces. (2012, background): “The most crucial difference is that V G predominantly drops at the EDL interface, so that the electric field produced is on the order of 10 MV cm −1 , allowing high-density charge accumulation reaching 10 15 cm −2 (ref”