Giant Rashba-type spin splitting in bulk BiTeI.
By K. Ishizaka, M. Bahramy, H. Murakawa, M. Sakano, T. Shimojima, T. Sonobe, K. Koizumi, Shik Shin, H. Miyahara, A. Kimura and 12 more. Nature Materials, 2011
733 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/d621d61fd3e0f8f579e4a5c931cad5d180bc25ee
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In Atomic and Molecular Physics, and Optics
In Electronic, Optical and Magnetic Materials
Citations in the corpus
- Direct observation of spin-polarized bulk bands in an inversion-symmetric semiconductor (2014, background): “In the second, a lack of global inversion symmetry in the unit cell mediates spin splitting of the bulk electronic states, either through a Dresselhaus-type interaction,(18) or a recently discovered bulk form of the Rashba effect.(4,19)”
- Ferroelectric Rashba semiconductors as a novel class of multifunctional materials (2013, methodology): “In this framework, a major breakthrough was provided by BiTeI, the first known noncentrosymmetric semiconductor showing huge Rashba-like spin-splitting in its bulk (not surface) band-structure, [3,4] driven by the presence of a nontrivial ordering of the bands near the Fermi surface[5].”
- Quantized circular photogalvanic effect in Weyl semimetals (2016, background): “Note that BiTeI (ref.”
- New perspectives for Rashba spin-orbit coupling. (2015, background): “m [13]) as large as on the surface of topological insulators.”
- Angle-resolved photoemission studies of quantum materials (2020, unknown): “This splitting is significantly larger than that observed in semiconductor heterostructure 2DEGs and Au(111) surface states (King et al., 2011b), and comparable to the giant Rashba-type splitting observed for bulk bands in non-centrosymmetric semiconductors (Ishizaka et al., 2011).”