1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

By R. Suzuki, N. Taoka, M. Yokoyama, Sanghoon Lee, Sanghyeon Kim, T. Hoshii, T. Yasuda, W. Jevasuwan, T. Maeda, O. Ichikawa and 4 more. 2012

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