GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration

By K. Volz, A. Beyer, W. Witte, J. Ohlmann, I. Nemeth, B. Kunert, W. Stolz. 2011

325 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d55778b9d4a5ad2b2910b93e518e44234f9d2254

Citations in the corpus

• Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics (2017, unknown): “However, except for nearly lattice-matched GaP on Si [5], conventional hetero-epitaxy on planar Si wafers generally requires a 4°–6° offcut angle in order to form a prominent double-stepped Si surface that prevents APDs.”