Nonballistic spin-field-effect transistor.

By J. Schliemann, J. C. Egues, Daniel Loss. Physical Review Letters, 2002

631 citations recorded by the source corpus.

We propose a spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types. Different from earlier proposals, spin transport through our device is tolerant against spin-independent scattering processes. Hence the requirement of strictly ballistic transport can be relaxed. This follows from a unique interplay between the Dresselhaus and the Rashba coupling; these can be tuned to have equal strengths, leading to k-independent eigenspinors even in two dimensions. We discuss two-dimensional devices as well as quantum wires. In the latter, our setup presents strictly parabolic dispersions which avoids complications from anticrossings of different bands.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d54fa57c355c0cbea988ca4e2291e616a7f61934

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In Atomic and Molecular Physics, and Optics

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Citations in the corpus

Spin dynamics in semiconductors (2010, methodology): “For some special polarization direction, spin r elaxation time is extremely large [194, 196, 203, 339, 919, 920].”
Measurement of Rashba and Dresselhaus spin-orbit magnetic fields (2007, background): “) requires precise control of the spin’s environment and of the Dresselhaus and Rashba field”
Artificial gauge fields in materials and engineered systems (2017, neutral): “Mastering of the spin–orbit coupling structure is a prerequisite in order to precisely control spin dynamics/transport and implement semiconductor spintronics devices, such as a spin field-effect transistor [327,328,28].”
Electrical detection of spin transport in lateral ferromagnet–semiconductor devices (2006, background): “ , where )N(Ef is the density of states at the Fermi energy in GaAs. The conditions for electrochemical equilibrium lead to a voltage difference5 e P P E e P V V Fe Fe GaAs f 3 2η μ η − = Δ = ↑↓ ↑↑ , (2) 6 where η is the spin transmission efficiency of the interface and e is the electronic charge. W”
Colloquium: Artificial gauge potentials for neutral atoms (2010, background): “An important ingredient of the DDT is the spin-orbit coupling of the Rashba (Rashba, 1960; Winkler, 2003) or Dresselhaus (Dresselhaus, 1955; Schliemann et al., 2003) types.”
Challenges for semiconductor spintronics (2007, background): “Elegant approaches to balancing precessional transport in lateral devices might permit efficient spin manipulation of ensembles, but in the diffusive regim”
Direct mapping of the formation of a persistent spin helix (2012, background): “This causes the precession angle of a moving electron to vary linearly with the distance traveled along that direction, irrespective of whether the electron path is ballistic or diffusive [10, 11].”
New perspectives for Rashba spin-orbit coupling. (2015, methodology): “ise to a band spin splitting, given by contributions linear and cubic in momentum p. The most effective way to suppress the spin relaxation is to utilize the so-called persistent spin helix condition [52], [53] where the Rashba SO strength is equal to p-linear Dresselhaus SO strength. Under this con”
Spintronics (2015, background): “…Johnson 1993], but was experimentally developed recently, thanks to the rapid progress of ferromagnetic study on spin-orbit interaction, and since then a wide variety of spin transistors based on various operating principles have been proposed [Schliemann et al. 2003; Sugahara and Tanaka 2004].”