ZnO nanowire UV photodetectors with high internal gain.
By C. Soci, A. Zhang, B. Xiang, S. Dayeh, D. Aplin, J. Park, X. Bao, Y. Lo, D. Wang. Nano letters (Print), 2007
2,515 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/d4da02fb69c1bb327a094718dab1eafd4aa5b96b
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In Electrical and Electronic Engineering
In Electronic, Optical and Magnetic Materials
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Citations in the corpus
- Few-Layer MoS2 with high broadband Photogain and fast optical switching for use in harsh environments. (2013, methodology): “The measurement was carried out under a bias of 10 V with a mechanical chopper to modulate the frequency of light sources.(9)”
- A CuO nanowire infrared photodetector (2011, background): “Compared with thin-film-type metal oxide photodetectors, t has been reported that 1D metal oxide nanowire photodetectors ould provide a high photoconductivity gain due to the efficient urface-enhanced electron–hole separation [6].”
- Printed multifunctional flexible device with an integrated motion sensor for health care monitoring (2016, background): “The relatively slow response time observed for the device is attributed to the mechanism of oxygen absorption and desorption from ZnO surfaces on exposure to UV light (24, 25).”