Intrinsic phonon relaxation times from first-principles studies of the thermal conductivities of Si and Ge
By A. Ward, D. Broido. 2010
311 citations recorded by the source corpus.
Subfields: Civil and Structural Engineering, Materials Chemistry, Mechanics of Materials
View Paper: https://www.semanticscholar.org/paper/d4c73e9a9abb30883d5e5fd38838c3fe82f6efdf
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In Civil and Structural Engineering
In Materials Chemistry
- Jesús Carrete
- Wu Li
- Natalio Mingo
- Nebil A. Katcho
- Kourosh Kalantar-Zadeh
- Michael S. Strano
- Serge Zhuiykov
- X. Ruan
In Mechanics of Materials
Citations in the corpus
- Transition metal oxides – Thermoelectric properties (2013, methodology): “Calculations of the thermal conductivity and phonon mean free path in TE TMOs using combined density functional theory (DFT) [105, 106] and molecular dynamics (MD) [107-109] simulations on the other hand are difficult and computationally costly because of the extremely complex crystal structure of a”
- ShengBTE: A solver of the Boltzmann transport equation for phonons (2014, background): “When the only scattering sources are the two- and three-phonon processes, the resulting linearized BTE can then be written as [8,9,40,17,16]:”