Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires

By A. Mishra, L. Titova, T. Hoang, H. Jackson, L. M. Smith, J. Yarrison-Rice, Y. Kim, H. Joyce, Q. Gao, H. Tan and 1 more. 2007

205 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d4bdc3498ddbaf9fa3042290efde354b32fd545c

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In Atomic and Molecular Physics, and Optics

1. Magnus Borgström
2. J. Wallentin

In Biomedical Engineering

1. J. Wallentin
2. Magnus Borgström

In Electrical and Electronic Engineering

1. Magnus Borgström
2. J. Wallentin

Citations in the corpus

• Doping of semiconductor nanowires (2011, background): “42 eV for InP [61]), and in addition there is often a type II band offset [62].”