Sodium incorporation strategies for CIGS growth at different temperatures
By D. Rudmann, D. Bremaud, A. D. Cunha, G. Bilger, A. Strohm, M. Kaelin, H. Zogg, A. Tiwari. 2005
154 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/d443b98cdce0fc6af99b138254090a24bbae7999
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- David B. Mitzi
- A. Tiwari
- Thomas Feurer
- Hong-xia Wang
- O. Gunawan
- Teodor K. Todorov
- Tayfun Gokmen
- S. Abermann
In Materials Chemistry
- David B. Mitzi
- A. Tiwari
- Thomas Feurer
- Hong-xia Wang
- O. Gunawan
- Teodor K. Todorov
- Tayfun Gokmen
- M. Shahbazi
Citations in the corpus
- Non‐vacuum methods for formation of Cu(In, Ga)(Se, S)2 thin film photovoltaic absorbers (2010, result): “to the presence of Na in the layers, in the same way as for co-evaporated CIGS [156–158].”
- Highly efficient Cu(In,Ga)Se2 solar cells grown on flexible polymer films. (2011, background): “, the CIGS growth temperature is a key parameter that determines the grading profil”
- Progress in thin film CIGS photovoltaics – Research and development, manufacturing, and applications (2017, background): “If not diffusing directly from the glass substrate during the absorber deposition at elevated temperature [55], similar beneficial effect on the bulk electronic properties were observed when adding them in a controlled manner prior, during, or after CIGS growth [56].”