Frequency-Domain Thermal Modeling and Characterization of Power Semiconductor Devices

By Ke Ma, Ning He, Marco Liserre, Frede Blaabjerg. IEEE transactions on power electronics, 2016

175 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d3be9a1c325a4be59b364017da813b0988304329

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Frede Blaabjerg
2. Huai Wang
3. Ke Ma
4. Marco Liserre
5. Xiongfei Wang
6. Friedrich Wilhelm Fuchs
7. Yun Wei Li
8. Poh Chiang Loh

Citations in the corpus

• New Approaches to Reliability Assessment: Using physics-of-failure for prediction and design in power electronics systems (2016, methodology): “A frequency domain thermal impedance model for a power semiconductor device is thereby proposed for this purpose [20], as illustrated in Figure 10, in which a low-pass filter (LPF) is added to the thermal path.”
• Power Electronics Reliability: State of the Art and Outlook (2021, methodology): “to change simultaneously with the ambient temperature in [93, 94].”