Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

By J. Rozen, S. Dhar, M. Zvanut, John R. Williams, L. Feldman. 2009

176 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d37338c0cbad2fe60a1580eb7f3e063c84ed7a59

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In Electrical and Electronic Engineering

1. Zheng Chen

Citations in the corpus

• Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs (2012, background): “The observed shifts in threshold voltage are in-line with those measured using nitridedmetal-oxide-semiconductor capacitors [12]–[14].”