Narrow-linewidth homogeneous optical emitters in diamond nanostructures via silicon ion implantation

By Ruffin Evans, Alp Sipahigil, D. Sukachev, A. Zibrov, Mikhail D. Lukin. 2015

166 citations recorded by the source corpus.

The negatively-charged silicon-vacancy ($\mathrm{SiV}^{-}$) center in diamond is a bright source of indistinguishable single photons and a useful resource in quantum information protocols. Until now, $\mathrm{SiV}^{-}$ centers with narrow optical linewidths and small inhomogeneous distributions of $\mathrm{SiV}^{-}$ transition frequencies have only been reported in samples doped with silicon during diamond growth. We present a technique for producing implanted $\mathrm{SiV}^{-}$ centers with nearly lifetime-limited optical linewidths and a small inhomogeneous distribution. These properties persist after nanofabrication, paving the way for incorporation of high-quality $\mathrm{SiV}^{-}$ centers into nanophotonic devices.

Subfields: Materials Chemistry, Organic Chemistry

View Paper: https://www.semanticscholar.org/paper/d282709e93dc457688fef91a2a27e5c57e382d55

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In Materials Chemistry

1. Fedor Jelezko
2. Hongkun Park
3. J. Wrachtrup

Citations in the corpus

• A fiber-coupled diamond quantum nanophotonic interface (2016, unknown): “, high-temperature annealing and acid treatments [32,33].”
• An integrated diamond nanophotonics platform for quantum-optical networks (2016, methodology): “The effect of each post-implantation step is described in more detail in References (17, 35).”