Electrical response of amorphous silicon thin-film transistors under mechanical strain

By H. Gleskova, Sigurd Wagner, W. Soboyejo, Zhigang Suo. 2002

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The 2021 flexible and printed electronics roadmap (2021, methodology): “The study in [141] relied on a statistical timing analyzer (STA) to identify bending hotspots, and used the derived information together with TFT bending models [142] to generate a hotspot mapping for guiding circuit layout, followed by the cell placer’s simulated annealing process for finding the o”
Flexible electronics under strain: a review of mechanical characterization and durability enhancement strategies (2016, background): “This includes carrier mobility that linearly increases/decreases with strain and partially recovers with relaxation [285].”
Mechanics of thin-film transistors and solar cells on flexible substrates (2006, background): “…yet exist, a number of experimental results are available and simple mechanical theories have been worked out (Gleskova and Wagner, 1999a,b, 2001; Suo et al., 1999; Gleskova et al., 2000, 2002, 2004; Wagner et al., 2000, 2002; Hsu et al., 2002b, 2004; Jones et al., 2002; Servati and Nathan, 2005).”
A woven inverter circuit for e-textile applications (2004, background): “Thin-film transistors (TFTs) of amorphous silicon made on substrates of 50- m-thick polyimide foil [6] keep functioning while bent [7] to radii of curvature as small as 0.”