A strain tunable single-layer MoS2 photodetector

By Patricia Gant, Peng Huang, David P'erez de Lara, Dan Guo, R. Frisenda, A. Castellanos-Gómez. Materials Today, 2019

186 citations recorded by the source corpus.

Abstract Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes in the intrinsic properties of 2D materials, the application of strain can also be used to modify the characteristics of devices based on them. In this work, we study flexible and transparent photodetectors based on single-layer MoS2 under the application of biaxial strain. We find that by controlling the level of strain, we can tune the photoresponsivity (by 2–3 orders of magnitude), the response time (from

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d0e1ce5160bf371a70597f4f3463bf5c6fc7ee52

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In Electrical and Electronic Engineering

1. Yujia Chen
2. Shengxue Yang
3. Chengbao Jiang

In Materials Chemistry

1. Yujia Chen
2. Shengxue Yang
3. Chengbao Jiang

Citations in the corpus

• Strain engineering of two‐dimensional materials: Methods, properties, and applications (2021, background): “5 GPa.(45) After transferring monolayer MoS2 onto the PC substrate, a variable strain in MoS2 is continuously induced from a compressive strain of −1.”