Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

By Can-Li Song, Yilin Wang, Ye-Ping Jiang, Yi Zhang, Cui-Zu Chang, Lili Wang, K. He, Xi Chen, J. Jia, Yayu Wang and 7 more. 2010

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Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H–SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0±0.2×1011/cm2, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d073ed954868a753b7a8072fd43942a754227dd4