Physical Properties of N2O and NO-nitrided gate oxides grown on 4H-SiC

By P. Jamet, Sima Dimitrijev. 2001

139 citations recorded by the source corpus.

Subfields: Ceramics and Composites, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d0659788627c9c1e1f9cced39e23443b5dffdef7