Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density

By H. Cho, Jeongyong Lee, G. Yang, C. Kim. 2001

159 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/cf3c82d8fb04c1eb61d45192baac2185e8c8b92a