Resonant levels in bulk thermoelectric semiconductors
By J. Heremans, B. Wiendlocha, A. Chamoire. 2012
689 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/cf26c36bcaa5ef3d416064cbb67d27e379815a8e
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In Atomic and Molecular Physics, and Optics
In Materials Chemistry
Citations in the corpus
- Recent advances in high-performance bulk thermoelectric materials (2016, background): “5 at 773 K.(153) Al doping was reported to result in n-type resonant doping in PbSe with a peak zT value of ∼1.”
- Advances in thermoelectric materials research: Looking back and moving forward (2017, background): “The efficacy of RLs is subject to properly positioning the ED relative to the EF and the G value; the s and p states (orbitals) of impurity aremore practical than the 3d and f states in the RLs scheme (37).”
- Size effect in thermoelectric materials (2016, background): “Actually, similar idea of enhancing the electronic density-ofstates has also been achieved later in bulk materials by introducing the resonant level from dopants.(12,15) Noticeable enhancements in Seebeck coefficient have been observed, which has effectively boosted the thermoelectric performance.”
- On the tuning of electrical and thermal transport in thermoelectrics: an integrated theory–experiment perspective (2016, background): “The aim is to have a dopant that forms the defect state in the vicinity of the Fermi level.(35,36) Such dopants usually have their electronic configuration very close to that of the host, such as when doping by elements from the neighbouring columns of the periodic table.”