Charge transfer between epitaxial graphene and silicon carbide
By S. Kopylov, A. Tzalenchuk, S. Kubatkin, Vladimir Fal'ko. 2010
158 citations recorded by the source corpus.
We analyze doping of graphene grown on SiC in two models which differ by the source of charge transferred to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyze the responsivity of graphene to the density variation by means of electrostatic gates.
Subfields: Biomedical Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/ceb431a4dbdb13d55cd93c03ccd415c5da429df8
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In Biomedical Engineering
In Materials Chemistry
Citations in the corpus
- Water on graphene: review of recent progress (2018, background): “Annealing the graphene sample in a hydrogen rich environment at high temperatures (700–1100 °C) will enable the hydrogen to penetrate through the IFL and break the Si–”
- Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction (2015, background): “vel results in n-doping of graphene and in a reduction of the SBH. On the contrary, no doping occurs with deposited graphene (Fig. 10(c)). The charge transfer from SiC to graphene was studied in Ref. [131] where the saturation density of n-type doping of single layer graphene was estimated around 10”