Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides

By Gui-Bin Liu, Wen-Yu Shan, Yugui Yao, W. Yao, Di Xiao. 2013

710 citations recorded by the source corpus.

We present a three-band tight-binding (TB) model for describing the low-energy physics in monolayers of group-VIB transition metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te). As the conduction- and valence-band edges are predominantly contributed by the dz2 , dxy, and dx2 y2 orbitals of M atoms, the TB model is constructed using these three orbitals based on the symmetries of the monolayers. Parameters of the TB model are fitted from the first-principles energy bands for all MX2 monolayers. The TB model involving only the nearest-neighbor M-M hoppings is sufficient to capture the band-edge properties in the K valleys, including the energy dispersions as well as the Berry curvatures. The TB model involving up to the third-nearest-neighbor M-M hoppings can well reproduce the energy bands in the entire Brillouin zone. Spin-orbit coupling in valence bands is well accounted for by including the on-site spin-orbit interactions ofM atoms. The conduction band also exhibits a small valley-dependent spin splitting which has an overall sign difference between MoX2 and WX2. We discuss the origins of these corrections to the three-band model. The three-band TB model developed here is efficient to account for low-energy physics in MX2 monolayers, and its simplicitymore » can be particularly useful in the study of many-body physics and physics of edge states.« less

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ce6dd1e7a8b50e8c2bec24d5accf803724adac17

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

  1. Hongyi Yu
  2. Xiaodong Xu
  3. W. Yao
  4. D. Mandrus
  5. G. Burkard
  6. Q. Niu
  7. X. Cui
  8. M. Potemski

In Materials Chemistry

  1. W. Yao
  2. Xiaodong Xu
  3. Hongyi Yu
  4. Ji Feng
  5. Q. Niu
  6. X. Cui
  7. D. Mandrus
  8. Aaron M. Jones

Citations in the corpus