Impact ionization in InSb probed by terahertz pump—terahertz probe spectroscopy

By Matthias Hoffmann, J. Hebling, H. Hwang, K. Yeh, Keith A. Nelson. 2008

195 citations recorded by the source corpus.

Indium antimonide InSb is a model system for the study of hot-electron dynamics due to its low band gap of 170 meV at room temperature 1 and the fact that it has the highest electron mobility and saturation velocity among all known semiconductors. The wealth of nonequilibrium transport phenomena that have been observed in this material 2–4 is of special interest due to the large nonparabolicity of the conduction band, 5 which results in negative differential mobility

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Spectroscopy

View Paper: https://www.semanticscholar.org/paper/ce150f9872a0e66e32997aa163b6d031afb73e6c

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

In Spectroscopy

Citations in the corpus

Single-cycle terahertz pulses with amplitudes exceeding 1 MV/cm generated by optical rectification in LiNbO3 and applications to nonlinear optics (2011, background): “, phonon absorption, carrier mobility changes, and exciton dissociation, has made the carrier multiplication behavior blur.(9,13,14) Here, we demonstrate that newly developed near-half-cycle THz pulses can induce extraordinary carrier multiplication in GaAs quantum wells (QWs).”
The 2023 terahertz science and technology roadmap (2023, background): “THz-driven impact ionization and Zener tunneling, resulting in the increase of free carrier density in semiconductors, also lead to pronounced THz nonlinearities [58, 59].”