Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes.

By Fang Qian, S. Gradečak, Yat Li, C. Wen, Charles M. Lieber. Nano letters (Print), 2005

877 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Nanowire Transistor Performance Limits and Applications (2008, background): “and composition during MOCVD nanowire growth process [16], [17], [92] allows fine tuning of the bandstructure and, more importantly, the formation of near-ideal atomically sharp”
Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers. (2008, result): “77 N, are consistent with that expected based on our previous studies of InGaN shell growt”
Nanowires With Promise for Photovoltaics (2011, background): “Until now, a few reports with intentional p- and n-type [10], [60], [61] doping of III–V NW materials have been presented and pn-junctions have been shown in axial [4], [10], [17] and radial [62], [63] geometry, and by crossing p- and n-type NWs [64]–[66].”
Metal-catalyzed semiconductor nanowires: a review on the control of growth directions (2010, neutral): “These unique properties have allowed the fabrication of a diverse range of nanowire-based devices including field-effect transistors [29–31], lasers [32– 34], light-emitting diodes [35, 36, 37], photodetectors [38–40] and solar cells [41–43] among others.”
Quasi-one-dimensional metal oxide materials—Synthesis, properties and applications (2006, background): “Core–shell nanowires Semiconductor nanowires have been made into core–sheath configuration [116,117], which permits the formation of heterojunctions with in the nanostructure, yielding tunable and efficient devices [118].”