Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2.

By Vinod K. Sangwan, Deep Jariwala, I. Kim, K. Chen, T. Marks, Lincoln J. Lauhon, Mark C. Hersam. Nature Nanotechnology, 2015

634 citations recorded by the source corpus.

Continued progress in high-speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two-terminal device with internal resistance that depends on the history of the external bias voltage. State-of-the-art memristors, based on metal-insulator-metal (MIM) structures with insulating oxides, such as TiO₂, are limited by a lack of control over the filament formation and external control of the switching voltage. Here, we report a class of memristors based on grain boundaries (GBs) in single-layer MoS₂ devices. Specifically, the resistance of GBs emerging from contacts can be easily and repeatedly modulated, with switching ratios up to ∼10(3) and a dynamic negative differential resistance (NDR). Furthermore, the atomically thin nature of MoS₂ enables tuning of the set voltage by a third gate terminal in a field-effect geometry, which provides new functionality that is not observed in other known memristive devices.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/cc77a3a3c8f5f3e12e6585530d63b23bce46584d

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In Electrical and Electronic Engineering

  1. Mark C. Hersam
  2. Vinod K. Sangwan

In Materials Chemistry

  1. Vinod K. Sangwan
  2. Mark C. Hersam

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