Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates
By Ya. I. Alivov, E. Kalinina, A. Cherenkov, D. Look, B. Ataev, A. Omaev, M. Chukichev, Darren Bagnall. 2003
451 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/cc5e892c21cbf2532f0ef24c5531e1ac6f52330f
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In Condensed Matter Physics
In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- ZnO Devices and Applications: A Review of Current Status and Future Prospects (2010, methodology): “When p-AlGaN was used to favor hole injection into ZnO thereby promoting emission in that material, strong EL peaking at � 390 nm due to excitonic recombination within ZnO has been observed [ 14 ], [15].”
- Recent Advances in ZnO-Based Light-Emitting Diodes (2010, background): “[108] fabricated n-ZnO/p-AlGaN heterojunction LEDs, taking advantage of the fact that AlGaN is also”