Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

By S. Krishnamoorthy, Zhanbo Xia, C. Joishi, Yuewei Zhang, Joe F. Mcglone, Jared M. Johnson, M. Brenner, A. Arehart, Jinwoo Hwang, S. Lodha and 1 more. 2017

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Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the β-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable heterojunction devices for high performance electronics.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/cb9b7a4120454671223a9943a071bd8590320982