The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory

By J. K. Ellis, Melissa J. Lucero, Gustavo E. Scuseria. 2011

526 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/cb5032704c818a1182b32f0c82571ebe1ca6f1f1

How researchers see this paper

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In Electrical and Electronic Engineering

1. Yi Cui
2. J. Shan
3. Joshua E. Goldberger
4. T. Heinz
5. Sayeef Salahuddin
6. Mauricio Terrones
7. Rodney S. Ruoff
8. M. Kuno

In Materials Chemistry

1. Qing Zhang
2. R. Ganatra
3. Mauricio Terrones
4. J. Shan
5. T. Heinz
6. Yi Cui
7. Sayeef Salahuddin
8. Wolfgang Windl

Citations in the corpus

• Few-layer MoS2: a promising layered semiconductor. (2014, background): “reflects interlayer interaction, quantum confinement, and long-range Coulomb effects.(47,50,55,80,83) 85 Sub-”