Approaching the intrinsic photoluminescence linewidth in transition metal dichalcogenide monolayers
By O. Ajayi, J. Ardelean, G. Shepard, Jue Wang, Abhinandan Antony, T. Taniguchi, Kenji Watanabe, T. Heinz, S. Strauf, X. Zhu and 1 more. 2017
312 citations recorded by the source corpus.
Excitonic states in monolayer transition metal dichalcogenides (TMDCs) have been the subject of extensive recent interest. Their intrinsic properties can, however, be obscured due to the influence of inhomogeneity in the external environment. Here we report methods for fabricating high quality TMDC monolayers with narrow photoluminescence (PL) linewidth approaching the intrinsic limit. We find that encapsulation in hexagonal boron nitride (h-BN) sharply reduces the PL linewidth, and that passivation of the oxide substrate by an alkyl monolayer further decreases the linewidth and also minimizes the charged exciton (trion) peak. The combination of these sample preparation methods results in much reduced spatial variation in the PL emission, with a full-width-at-half-maximum as low as 1.7 meV. Analysis of the PL line shape yields a homogeneous width of 1.43 ± 0.08 meV and inhomogeneous broadening of 1.1 ± 0.3 meV.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/cb243f785a3aa84d4d20eda373f00a7114fc51e2
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Citations in the corpus
- Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors (2018, unknown): “7 meV have been observed [62, 63].”
- Chemical and structural stability of 2D layered materials (2019, background): “[16] Ajayi O A et al 2017 Approaching the intrinsic”