Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper

By L. Banszerus, M. Schmitz, S. Engels, J. Dauber, M. Oellers, F. Haupt, Kenji Watanabe, Takashi Taniguchi, B. Beschoten, Christoph Stampfer. Science Advances, 2015

766 citations recorded by the source corpus.

A novel dry transfer technique opens the door to large-scale CVD graphene with carrier mobilities of up to several 100,000 cm2 V−1 s−1. Graphene research has prospered impressively in the past few years, and promising applications such as high-frequency transistors, magnetic field sensors, and flexible optoelectronics are just waiting for a scalable and cost-efficient fabrication technology to produce high-mobility graphene. Although significant progress has been made in chemical vapor deposition (CVD) and epitaxial growth of graphene, the carrier mobility obtained with these techniques is still significantly lower than what is achieved using exfoliated graphene. We show that the quality of CVD-grown graphene depends critically on the used transfer process, and we report on an advanced transfer technique that allows both reusing the copper substrate of the CVD growth and making devices with mobilities as high as 350,000 cm2 V–1 s–1, thus rivaling exfoliated graphene.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/caf5ab56accf6cf3b869d5d5b5b8a20c6d0a0ce2

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Citations in the corpus

Frontiers of graphene and 2D material-based gas sensors for environmental monitoring (2020, background): “Although this method usually produces graphene of less quality than the exfoliated counterpart, there is great investment from the community to achieve higher quality CVD graphene [125].”
Graphene related materials for thermal management (2019, background): “For instance, a record high electron mobility of 3 × 107 cm2 V−1 s−1 has been theoretically predicted for graphene [6] and a mobility of 350 000 cm2 V−1 s−1 has been exper imentally reported from chemical vapor deposition (CVD)-grown graphene [7], which could meet the requirement of high-end electro”
Production and processing of graphene and related materials (2020, methodology): “Dry transfer using h-BN A contamination- free transfer process utilizes exfoliated hBN flakes to pick up graphene from Cu [823, 832].”
Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles (2020, background): “thermal conductivity [4,5], mechanical strength [6] and carrier mobility [7] along with outstanding electronic and optical properties [8–11], initiated extending and continuous interests toward two-dimensional (2D) materials.”