Implantation of labelled single nitrogen vacancy centers in diamond using N15
By J. Rabeau, P. Reichart, G. Tamanyan, D. Jamieson, Steven Prawer, Fedor Jelezko, T. Gaebel, I. Popa, M. Domhan, J. Wrachtrup. 2005
218 citations recorded by the source corpus.
Nitrogen-vacancy (NV−) color centers in diamond were created by implantation of 7 keV N15(I=1∕2) ions into type IIa diamond. Optically detected magnetic resonance was employed to measure the hyperfine coupling of single NV− centers. The hyperfine spectrum from NV−15 arising from implanted N15 can be distinguished from NV−14 centers created by native N14(I=1) sites. Analysis indicates 1 in 40 implanted N15 atoms give rise to an optically observable NV−15 center. This report ultimately demonstrates a mechanism by which the yield of NV− center formation by nitrogen implantation can be measured.
Subfields: Computational Mechanics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/cab5decde9dec49f6c8d3f5d6eced7fd6765e894
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In Electrical and Electronic Engineering
In Materials Chemistry
- R. Walsworth
- L. Pham
- Steven Prawer
- A. Greentree
- Stefania Castelletto
- A. Yacoby
- Igor Aharonovich
- M. Turner
Citations in the corpus
- Magnetic field imaging with nitrogen-vacancy ensembles (2011, background): “This thin-layer geometry can be achieved either by shallow implantation of nitrogen ions [18, 19] or by altering the growth conditions of chemical vapor deposition (CVD) synthesized diamonds such that there is a thin N-doped NV-rich layer at one surface of a high-purity substrate.”
- Diamond-based single-photon emitters (2011, background): “Rabeau et al reported that such a methodology results in crystals with a size of 60–70 nm that often host single NV centers [100].”