Numerical modeling of CIGS and CdTe solar cells: setting the baseline
By M. Gloeckler, A. Fahrenbruch, J. Sites. 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of, 2003
321 citations recorded by the source corpus.
View Paper: https://www.semanticscholar.org/paper/ca9ee1b1e58808dcdf04896c39be0df5787feaa2
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
- M. Burgelman
- J. Verschraegen
- J. Sites
- M. Gloeckler
- S. Degrave
- P. Nollet
- A. Crovetto
- Hossein Movla
Citations in the corpus
- Band-gap grading in Cu(In,Ga)Se2 solar cells (2005, background): “The starting point for the simulations is a three layer CIGS model discussed earlier [15], with an additional mid-gap recombination center being present in the absorber.”
- Modeling thin‐film PV devices (2004, methodology): “Recently, a baseline model for CIGS and for CdTe cells was proposed by Gloeckler et al.(22) Although the model incorporates only the minimum number of layers and a minimum of deep defect distributions, it serves as an excellent starting point for more specific and more complete simulations.”