Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor
By Aubrey T. Hanbicki, B. Jonker, G. Itskos, G. Kioseoglou, A. F. R. Laboratory, Suny Buffalo. 2001
601 citations recorded by the source corpus.
We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine, emitting circularly polarized light, and the quantum selection rules relating the optical and carrier spin polarizations provide a quantitative, model-independent measure of injection efficiency. This demonstrates that spin injecting contacts can be formed using a widely employed contact methodology, providing a ready pathway for the integration of spin transport into semiconductor processing technology.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/ca47cafb77ba634684528765feb76acfb325ff47
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In Atomic and Molecular Physics, and Optics
In Materials Chemistry
Citations in the corpus
- Spin dynamics in semiconductors (2010, background): “It has be en r ported that in a wide range of temperature, up to 30% of the spin polarization is injecte d from Fe inton-type AlGaAs and GaAs and survives over a distance of 100 nm [958, 959, 964].”
- Spintronics: Fundamentals and applications (2004, neutral): “Some care has to be taken in defining the efficiency of the spin injection, normalized to the polarization of a ferromagnet, as used in related previous experiments (Hanbicki and Jonker, 2002; Hanbicki et al., 2002; Jansen, 2002).”
- Spin-polarised currents and magnetic domain walls (2005, background): “Several groups have recently demonstrated spin injection from metals[79, 80, 81], ferromagnetic semiconductors [82, 83, 84] and tunnel and hot electron injectors [85, 86, 87] into a semiconductor by using a so-called spin-LED as a detector.”
- Structural and magnetic properties of ultrathin epitaxial Fe films on GaAs(001) and related semiconductor substrates (2005, background): “At present the spin injection efficiencies reported for Fe/GaAs [7] as well as for Fe/AlGaAs [8, 17] Schottky barrier structures (up to 32% at 4.”