Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si Substrates
By D. Late, Bin Liu, H. Matte, C. Rao, V. Dravid. 2012
466 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/c948ddf37b7e8d04bfe90a4566965cf5f41e8085
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In Electrical and Electronic Engineering
In Materials Chemistry
- A. Castellanos-Gómez
- G. Steele
- Herre S. J. van der Zant
- M. Buscema
- Mauricio Terrones
- J. Shan
- T. Heinz
- Yi Cui
Citations in the corpus
- Progress, challenges, and opportunities in two-dimensional materials beyond graphene. (2013, background): “for initially identifying single- and multiple-layer flakes.(20,58,122,123) Dielectric-coated SiO2/Si substrates are the most common substrates used to visualize”
- The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2 (2013, background): “In this section, we extend the model used in Refs [33], [30-32] to also include the effect of optical iterference at the typical PL emission wavelengths of MoS2 laying on a multi-layered substrate.”
- Sensing behavior of atomically thin-layered MoS2 transistors. (2013, methodology): “9 nm (Figure 1d), which is consistent with previous reports.(26,47) For 2 5 layers of MoS2, the measured thicknesses were approximately 1.”