Electronic structure of silicon-based nanostructures

By G. G. Guzmán-Verri. 2007

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We have developed a unifying tight-binding Hamiltonian that can account for the electronic properties of recently proposed Si-based nanostructures, namely, Si graphene-like sheets and Si nanotubes. We considered the $s{p}^{3}{s}^{*}$ and $s{p}^{3}$ models up to first- and second-nearest neighbors, respectively. Our results show that the Si graphene-like sheets considered here are metals or zero-gap semiconductors, and that the corresponding Si nanotubes follow the so-called Hamada's [Phys. Rev. Lett. 68, 1579 (1992)] rule. Comparison to a recent ab initio calculation is made.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/c8d176b4f835d041d5ffbe0f2cdf89d221d645de