Effect of strain compensation on quantum dot enhanced GaAs solar cells

By S. Hubbard, C. Cress, C. Bailey, R. Raffaelle, S. Bailey, D. Wilt. 2008

422 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/c8b3e9d399e911946e3d724afb1a985f63687540

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In Materials Chemistry

1. R. Raffaelle

Citations in the corpus

• Open-Circuit Voltage Improvement of InAs/GaAs Quantum-Dot Solar Cells Using Reduced InAs Coverage (2011, background): “Using a reduction in InAs effective thickness (or coverage value Θ), to reduce the formation of large, coalesced, and defective QDs along with proper, QD-specific, strain-balancing techniques, the loss in Voc typically associated with these devices has been significantly mitigated.”