Strain relaxation of GaAs/Ge crystals on patterned Si substrates

By Jizhong Li, J. Bai, Ji-Soo Park, B. Adekore, K. Fox, M. Carroll, Anthony Lochtefeld, Z. Shellenbarger. 2014

145 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/029529d15079eb901a040fa4f5222d579f965c60

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Citations in the corpus

• How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches (2018, background): “It allows very low defect densities to be achieved because of the ART but requires upfront additional processing of the patterned wafer.”