Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant

By Kyoung-Kok Kim, Hyun-sik Kim, D. Hwang, Jae-Hong Lim, Seong-Ju Park. 2003

610 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/c6eb6dd11612d9553c72420664a717d626513fa5

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Hideo Ohno
2. Seong-Ju Park
3. Jang-Won Kang
4. A. Tsukazaki
5. D. Hwang
6. Yong‐Seok Choi
7. T. Dietl

In Electronic, Optical and Magnetic Materials

1. Seong-Ju Park
2. D. Hwang
3. Jang-Won Kang
4. Yong‐Seok Choi
5. Hideo Ohno
6. M. Kawasaki

In Materials Chemistry

1. A. Tsukazaki
2. Seong-Ju Park
3. D. Hwang
4. Jang-Won Kang
5. Yong‐Seok Choi
6. A. Ohtomo
7. Hideo Ohno
8. Masatomo Sumiya

Citations in the corpus

• Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO (2004, background): “Several groups have postulated the use of p-type ZnO doped with nitrogen, arsenic or phosphoru”
• Recent Advances in ZnO-Based Light-Emitting Diodes (2010, methodology): “[78] prepared p-type ZnO thin films showing hole concentrations of 10(17)−10(19) cm−3 by sputtering a ZnO target doped with P2O5 at high temperatures followed by a thermal annealing process.”