Ultrasensitive WO3 gas sensors for NO2 detection in air and low oxygen environment
By Barbara Urasinska-Wojcik, T. Vincent, M. Chowdhury, Julian W. Gardner. 2017
192 citations recorded by the source corpus.
We report here on the results of a study into the response of a tungsten oxide based low power MEMS gas sensor to ppb of nitrogen dioxide at low levels of ambient oxygen. It was found that the resistive gas sensors not only had a high sensitivity to NO2 (3.4%/ppb vs. 0.2%/ppb obtained for commercial MOX) but can still operate reliably at lower oxygen levels (down to 0.5%) - albeit with slightly longer response and recovery times. The optimal operating temperature was determined to be ca. 350 °C and so easily within the range of a MEMS based SOI CMOS substrate. The response was sensitive to significant changes in ambient humidity, but was found to have low cross-sensitivity to CO, hydrogen, methane, and acetone even at much higher ppm levels. We believe that these tungsten oxide gas sensors could be exploited in harsh applications, i.e. with a low oxygen (lean) environment often associated in the exhaust gases from combustion systems.
Subfields: Bioengineering, Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/c6412b78ad35c95b5104f6b8df2cddb251eab772
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In Electrical and Electronic Engineering
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- Semiconductor Gas Sensors: Materials, Technology, Design, and Application (2020, background): “Metal Oxide Semiconductors An overview of the investigated metal oxide semiconductors shows that over the years, n-type semiconducting oxides [18] like tin oxide (SnO2) [36,37], zinc oxide (ZnO) [38,39], anatase (TiO2) [40,41], hematite (α-Fe2O3) [11], and tungsten oxide (WO3) [42,43] and, to a less”