Stacking fault energies and slip in nanocrystalline metals
By H. Swygenhoven, P. Derlet, A. Frøseth. Nature Materials, 2004
937 citations recorded by the source corpus.
Subfields: Computational Mechanics, Materials Chemistry, Structural Biology
View Paper: https://www.semanticscholar.org/paper/c5c772e58904e0338566192f5f625ebe5a4394b5
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In Computational Mechanics
- Yuntian Zhu
- Ting Zhu
- David L. McDowell
- Ju Li
- Enrique J. Lavernia
- Xiaozhou Liao
- Robert J. Asaro
- Douglas E. Spearot
In Materials Chemistry
In Structural Biology
- Yuntian Zhu
- Ting Zhu
- David L. McDowell
- Robert J. Asaro
- Douglas E. Spearot
- Subra Suresh
- Xiaoqiao He
- Mark A. Tschopp
Citations in the corpus
- Mechanistic models for the activation volume and rate sensitivity in metals with nanocrystalline grains and nano-scale twins (2005, methodology): “For example, we use the results of [43] for estimates of csf/cus and cus/cut.”
- Molecular dynamics simulation study of deformation mechanisms in 3C-SiC during nanometric cutting at elevated temperatures (2016, neutral): “The lowest energy barrier required to be crossed for the slip from the ideal configuration to the intrinsic stacking fault configuration is called unstable GSFE surfaces, which is improbable to be measured experimentally [26].”