Perspective: The future of quantum dot photonic integrated circuits
By Justin C. Norman, Daehwan Jung, Y. Wan, John E. Bowers. 2018
224 citations recorded by the source corpus.
Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with ...
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/c54bf77641448723cd4a60ff58a4f622984fd04a
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
- Lukas Chrostowski
- John E. Bowers
- Michael Hochberg
- Wim Bogaerts
- Bhavin J. Shastri
- Justin C. Norman
- Sudip Shekhar
- Weng W. Chow
Citations in the corpus
- A Review of High-Performance Quantum Dot Lasers on Silicon (2019, methodology): “The former could allow for future laser growth and processing up to the 450 mm scale, or, in the nearer term, for full wafer bonding to be used in 300 mm heterogeneous silicon photonics processes [10].”
- Roadmapping the next generation of silicon photonics (2023, background): “Due to its lower linewidth enhancement factor, α H , QD lasers enable lower linewidth and reduced sensitivity to reflections [94, 109].”
- How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches (2018, background): “Recently published extrapolated device life time of more than 10×10(6) h for an InAs QD laser on Si with a defect density of 7×10(6) cm clearly underlines the potential of QD lasers [107, 137, 138].”