Spin-dependent tunneling characteristics of fully epitaxial magnetic tunneling junctions with a full-Heusler alloy Co2MnSi thin film and a MgO tunnel barrier
By T. Ishikawa, T. Marukame, H. Kijima, K. Matsuda, T. Uemura, M. Arita, M. Yamamoto. 2006
163 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/c4f155e7702ae0fdc29350adb6cdc0527c4ea277
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Nobel Lecture: Origin, development, and future of spintronics (2008, result): “It now turns out from recent results in Japan Ishikawa et al., 2006 that ferromagnets of the family of the Heusler alloys also present very large TMR ratios with still 90% at room temperature Ishikawa et al., 2006 .”
- The emergence of spin electronics in data storage. (2007, background): “This could be achieved by replacing metallic ferromagnetic layers by 100% spin polarized conductors such as half metallic oxides [78] or Heussler alloys [79, 80], or diluted magnetic semiconductors (DMS) [81, 82].”