Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by half-metallicity of Co2MnSi and coherent tunneling
By Hong-xi Liu, Y. Honda, T. Taira, K. Matsuda, M. Arita, T. Uemura, Masafumi Yamamoto. 2012
244 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/c4024e14deef21e24fbe620ead0382c7437dbf5e
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Heusler 4.0: Tunable Materials (2016, background): “4Al (27) and Co2MnSi into spin-valve structures succeeded in delivering the expected MR-values in the range of MR ≈ 2000 %, after many years of materials and interface engineering (28).”