Probing layer number and stacking order of few-layer graphene by Raman spectroscopy.

By Y. Hao, Yingying Wang, Lei Wang, Zhenhua Ni, Ziqian Wang, Rui Wang, C. K. Koo, Zexiang Shen, J. Thong. Small, 2010

749 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/c3e32f6096dbd58e3f070bf15d7f5f847e4dc666

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Ryan Beams
2. Lukás Novotný
3. Luiz Gustavo Cançado
4. A. I. Zhmakin
5. A. Jorio

In Materials Chemistry

1. Lukás Novotný
2. Ryan Beams
3. Luiz Gustavo Cançado
4. A. Jorio

Citations in the corpus

• Raman characterization of defects and dopants in graphene (2015, methodology): “More recently it has been used to determine the stacking order and the sheet mis-orientation in bilayer graphene [22, 23].”
• The experimental observation of quantum Hall effect of lD3 chiral quasiparticles in trilayer graphene (2011, methodology): “The characteristic asymmetrical shape of the 2D band spectrum, with a dip near 2,700 cm −1 , was used to identify the ABC stacking in our sampl”