A new spin gapless semiconductors family: Quaternary Heusler compounds

By Guizhou Xu, Enke Liu, Guowei Li, Guodong Liu, Wenhong Wang, Guangheng Wu. 2013

250 citations recorded by the source corpus.

By using first-principles calculations, we investigate the band structures of a series of quaternary LiMgPdSn-type Heusler compounds. Our calculation results show that five compounds, CoFeMnSi, CoFeCrAl, CoMnCrSi, CoFeVSi and FeMnCrSb, possess unique electronic structures characterized by a half-metallic gap in one spin direction while they have a zero-width gap in the other spin direction showing a spin gapless semiconducting behavior. We further analyse the electronic and magnetic properties of all quaternary Heusler alloys involved, and reveal a semi-empirical general rule (the total valence electrons number should be 26 or 28) for indentifying spin gapless semiconductors in Heusler compounds. The influences of lattice distortion and main-group element change have also been discussed.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/c39af3cc335cad03bed7b8255bcd05481985e1d4