Low-temperature spin relaxation in n -type GaAs
By R. I. Dzhioev, K. Kavokin, V. Korenev, M. V. Lazarev, B. Meltser, M. Stepanova, B. P. Zakharchenya, D. Gammon, D. Katzer. 2002
213 citations recorded by the source corpus.
Low-temperature electron-spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from ${10}^{14}{\mathrm{cm}}^{\ensuremath{-}3}$ to $5\ifmmode\times\else\texttimes\fi{}{10}^{17}{\mathrm{cm}}^{\ensuremath{-}3}.$ A peculiarity related to the metal-to-insulator transition is observed in the dependence of the spin lifetime on doping near ${n}_{D}=2\ifmmode\times\else\texttimes\fi{}{10}^{16}{\mathrm{cm}}^{\ensuremath{-}3}.$ In the metallic phase, spin relaxation is governed by the Dyakonov-Perel mechanism, while in the insulator phase it is due to anisotropic exchange interaction and hyperfine interaction
Subfields: Atomic and Molecular Physics, and Optics
View Paper: https://www.semanticscholar.org/paper/c383a60168f84fc7406d42e98bf6e9867215ca0e
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In Atomic and Molecular Physics, and Optics
Citations in the corpus
- Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS2 and WS2 (2015, methodology): “These Kerr data are very reminiscent of traditional “Hanle-effect” studies in conventional semiconductors like n-type GaAs [14, 21, 22], wherein By dephases an optically injected steady-state electron spin polarization (Sz) due to spin precession about By.”